SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (R DS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which ...
Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
Abstract: This study analyzes the sequential failure and remaining useful life (RUL) of a multi-chip power module (MCPM) using finite element (FE) simulation, an empirical lifetime model, and ...
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