SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
A power MOSFET is almost invariably used in today's high-frequency power converter applications being a voltage controlled, fast switching and majority-carrier device. However, MOSFET's major ...
Sponsored by: Texas Instruments Even though gallium-nitride transistors are becoming a more popular solution in terms of power switching, the venerable MOSFET still can be used effectively in current ...
The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...
The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...
DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...
Mission critical servers and communications equipment must continue to operate, even as circuit boards and cards are plugged-in or pulled-out for maintenance and capacity adjustment. Hot swap ...
Toshiba has introduced a mosfet load switch gate driver in a 1.2 x 0.8 x 0.35mm 6bump WCSP6G the chip-scale package, suiting it to wearables and smartphones, it said. The IC, called TCK421G, can ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPD7107F,” a gate driver switch IPD [1] that controls the conduction and shut-off of current supplied ...
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